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60 V, 360 mA N-channel Trench MOSFET@en-us TO-236 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138P,215 by Nexperia is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
1859849
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Farnell | MOSFET, N-CH, 60V, 0.36A, SOT-23 RoHS: Compliant Min Qty: 5 Container: Cut Tape | 234688 |
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$0.0429 / $0.1965 | Buy Now |
DISTI #
1859849RL
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Farnell | MOSFET, N-CH, 60V, 0.36A, SOT-23 RoHS: Compliant Min Qty: 500 Container: Reel | 234688 |
|
$0.0429 / $0.0591 | Buy Now |
DISTI #
2439127
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Farnell | MOSFETS RoHS: Compliant Min Qty: 3000 Container: Reel | 110993 |
|
$0.0246 / $0.0257 | Buy Now |
DISTI #
1727-1142-1-ND
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DigiKey | MOSFET N-CH 60V 360MA TO236AB Min Qty: 1 Lead time: 8 Weeks Container: Digi-Reel®, Tape & Reel (TR), Cut Tape (CT) |
369224 In Stock |
|
$0.0235 / $0.1700 | Buy Now |
DISTI #
BSS138P,215
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Avnet Silica | Power MOSFET N Channel 60 V 360 mA 16 Ohm SOT23 TO236AB 3 Pins Surface Mount (Alt: BSS138P,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | Silica - 1128000 |
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Buy Now | |
DISTI #
BSS138P,215
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EBV Elektronik | Power MOSFET N Channel 60 V 360 mA 16 Ohm SOT23 TO236AB 3 Pins Surface Mount (Alt: BSS138P,215) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days | EBV - 1926000 |
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Buy Now | |
DISTI #
771-BSS138P215
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Mouser Electronics | MOSFETs SOT23 N CHAN 60V RoHS: Compliant | 1521144 |
|
$0.0220 / $0.1800 | Buy Now |
DISTI #
A03:0893_01045012
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Arrow Electronics | Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2510 | Asia - 687000 |
|
$0.0199 / $0.0223 | Buy Now |
DISTI #
E02:0323_03089472
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Arrow Electronics | Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks Date Code: 2507 | Europe - 525000 |
|
$0.0202 / $0.0226 | Buy Now |
DISTI #
V72:2272_06519146
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Arrow Electronics | Trans MOSFET N-CH 60V 0.36A 3-Pin SOT-23 T/R RoHS: Compliant Min Qty: 2725 Package Multiple: 1 Lead time: 8 Weeks Date Code: 2410 Container: Cut Strips | Americas - 27871 |
|
$0.0225 / $0.0283 | Buy Now |
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BSS138P,215
Nexperia
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Datasheet
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Compare Parts:
BSS138P,215
Nexperia
60 V, 360 mA N-channel Trench MOSFET@en-us TO-236 3-Pin
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 8 Weeks | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.36 A | |
Drain-source On Resistance-Max | 1.6 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.14 W | |
Pulsed Drain Current-Max (IDM) | 1.2 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS138P,215. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138P,215, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
BSS138P | NXP Semiconductors | Check for Price | 360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3 | BSS138P,215 vs BSS138P |
BSS138P | Nexperia | Check for Price | Small Signal Field-Effect Transistor | BSS138P,215 vs BSS138P |
BSS138P,215 | NXP Semiconductors | Check for Price | 60 V, 360 mA N-channel Trench MOSFET TO-236 3-Pin | BSS138P,215 vs BSS138P,215 |
BSS138P | Galaxy Microelectronics | Check for Price | Small Signal Field-Effect Transistor, | BSS138P,215 vs BSS138P |
The maximum operating temperature range for the BSS138P,215 is -55°C to 150°C.
To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V and 6V, and the drain-source voltage (Vds) should be between 1.5V and 20V.
The maximum continuous drain current (Id) for the BSS138P,215 is 1.4A, and the maximum pulsed drain current (Idm) is 4.2A.
To protect the BSS138P,215 from ESD, handle the device by the body or use an anti-static wrist strap, and ensure the PCB is designed with ESD protection in mind.
The recommended storage temperature range for the BSS138P,215 is -40°C to 125°C.