-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
BSS138WH6433XTMA1 by Infineon Technologies AG is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
2839437
|
Farnell | MOSFET, N-CH, AEC-Q101, 60V, 0.28A RoHS: Compliant Min Qty: 5 Container: Cut Tape | 15505 |
|
$0.0626 / $0.2461 | Buy Now |
DISTI #
2839437RL
|
Farnell | MOSFET, N-CH, AEC-Q101, 60V, 0.28A RoHS: Compliant Min Qty: 500 Container: Reel | 15505 |
|
$0.0626 / $0.0893 | Buy Now |
DISTI #
BSS138WH6433XTMA1CT-ND
|
DigiKey | MOSFET N-CH 60V 280MA SOT323-3 Min Qty: 1 Lead time: 10 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
42286 In Stock |
|
$0.0366 / $0.2200 | Buy Now |
DISTI #
SP000917558
|
EBV Elektronik | Trans MOSFET NCH 60V 028A 3Pin SOT323 TR (Alt: SP000917558) RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 11 Weeks, 0 Days | EBV - 0 |
|
Buy Now | |
DISTI #
726-BSS138WH6433XTMA
|
Mouser Electronics | MOSFETs N-Ch 60V 280mA SOT-323-3 RoHS: Compliant | 83068 |
|
$0.0360 / $0.2200 | Buy Now |
DISTI #
E02:0323_03615941
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks Date Code: 2521 | Europe - 10000 |
|
$0.0347 / $0.0384 | Buy Now |
DISTI #
V36:1790_06391505
|
Arrow Electronics | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Lead time: 10 Weeks Date Code: 2412 | Americas - 10000 |
|
$0.0238 / $0.0252 | Buy Now |
DISTI #
81004539
|
Verical | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Date Code: 2417 | Americas - 240000 |
|
$0.0393 / $0.0491 | Buy Now |
DISTI #
69264317
|
Verical | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 671 Package Multiple: 1 Date Code: 2326 | Americas - 40000 |
|
$0.0728 / $0.1240 | Buy Now |
DISTI #
83351595
|
Verical | Trans MOSFET N-CH 60V 0.28A 3-Pin SOT-323 T/R Automotive AEC-Q101 RoHS: Compliant Min Qty: 10000 Package Multiple: 10000 Date Code: 2412 | Americas - 10000 |
|
$0.0238 / $0.0252 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
BSS138WH6433XTMA1
Infineon Technologies AG
Buy Now
Datasheet
|
Compare Parts:
BSS138WH6433XTMA1
Infineon Technologies AG
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | SOT-323, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Factory Lead Time | 10 Weeks | |
Samacsys Manufacturer | Infineon | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 0.28 A | |
Drain-source On Resistance-Max | 3.5 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 4.2 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 0.5 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for BSS138WH6433XTMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of BSS138WH6433XTMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
NX7002BKWX | Nexperia | $0.0265 | NX7002BKW - 60 V, single N-channel Trench MOSFET@en-us SC-70 3-Pin | BSS138WH6433XTMA1 vs NX7002BKWX |
BSS138WH6327XTSA1 | Infineon Technologies AG | $0.0465 | Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WH6433XTMA1 vs BSS138WH6327XTSA1 |
2N7002KW-AU_R1_000A1 | PanJit Semiconductor | $0.0655 | Small Signal Field-Effect Transistor, | BSS138WH6433XTMA1 vs 2N7002KW-AU_R1_000A1 |
RSM002N06T2L | ROHM Semiconductor | $0.0773 | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, VMT3, 3 PIN | BSS138WH6433XTMA1 vs RSM002N06T2L |
2N7002KW | onsemi | $0.1303 | N-Channel Enhancement Mode Field Effect Transistor 60V, 310mA, 1.6Ω, SC-70-3 / SOT-323-3, 3000-REEL | BSS138WH6433XTMA1 vs 2N7002KW |
2N7002KW | Jiangsu Changjiang Electronics Technology Co Ltd | Check for Price | Small Signal Field-Effect Transistor | BSS138WH6433XTMA1 vs 2N7002KW |
2N7002KW_R2_00001 | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3 | BSS138WH6433XTMA1 vs 2N7002KW_R2_00001 |
RU1L002SNTCL | ROHM Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.25A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT3F, 3 PIN | BSS138WH6433XTMA1 vs RU1L002SNTCL |
2N7002KTB | PanJit Semiconductor | Check for Price | Small Signal Field-Effect Transistor, 0.115A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | BSS138WH6433XTMA1 vs 2N7002KTB |
NX7002BKVL | Nexperia | Check for Price | NX7002BK - 60 V, N-channel Trench MOSFET@en-us TO-236 3-Pin | BSS138WH6433XTMA1 vs NX7002BKVL |
The recommended PCB footprint for the BSS138WH6433XTMA1 is a 3-pin SOT23 package with a pitch of 0.95 mm and a pad size of 1.3 mm x 1.3 mm.
The BSS138WH6433XTMA1 has a thermal pad on the bottom of the package, which should be connected to a thermal pad on the PCB to improve heat dissipation. A thermal via array or a copper pour can be used to dissipate heat efficiently.
The BSS138WH6433XTMA1 is a high-speed switch with a maximum operating frequency of 100 MHz. However, the actual operating frequency may be limited by the application's requirements and the PCB layout.
To ensure reliability in high-temperature applications, it is recommended to follow the recommended operating conditions, use a suitable thermal management system, and consider using a thermally conductive material such as a thermal interface material (TIM) between the device and the heat sink.
The BSS138WH6433XTMA1 is rated for a maximum voltage of 12 V. While it can be used in high-voltage applications, it is essential to ensure that the device is operated within its recommended operating conditions to prevent damage or premature failure.